Researchers at Shanghai’s Fudan University have achieved a landmark advancement in low-dimensional magnetic materials that could fundamentally transform semiconductor technology. Published in the prestigious journal Nature, their study resolves a decades-old challenge in harnessing antiferromagnetic materials for practical computing applications.
The research team from the State Key Laboratory of Surface Physics demonstrated unprecedented control over chromium thiophosphate (CrPS4), a layered antiferromagnetic material. Unlike conventional ferromagnets that power current data storage technologies, antiferromagnets maintain neighboring magnetic moments in opposing orientations, effectively neutralizing stray magnetic fields. This property enables superior stability and significantly higher data density potential.
Professor Wu Shiwei, co-corresponding author of the study, explained their breakthrough: “We’ve developed techniques to precisely control and directly observe the magnetic state using our custom magneto-optical microscope. This satisfies the fundamental requirements for binary data operations that have eluded researchers until now.”
The team’s most significant contribution involves expanding the classic theoretical model for ferromagnets to encompass antiferromagnetic behavior. Their modified framework predicts how these materials respond to external magnetic fields, with CrPS4 exhibiting an innovative “interlayer-locked” switching mechanism where all layers flip simultaneously rather than sequentially.
This coordinated switching preserves system stability while maintaining antiferromagnets’ inherent advantages: faster state transition speeds and minimal energy consumption compared to traditional ferromagnetic materials. The researchers additionally established clear criteria for evaluating other antiferromagnetic materials, providing a roadmap for future semiconductor development.
Industry analysts suggest this advancement could accelerate China’s progress in next-generation semiconductor technology, potentially reshaping global competition in information technology infrastructure. The breakthrough addresses critical limitations in current chip manufacturing as the industry pursues smaller, faster, and more energy-efficient devices.